100ns Pulse Bar Tester
Edge Emitting Laser Chip Testing and Sorting System
VCSEL Wafer Tester
普賽斯(PREISE) / BarT-HP
100ns Pulse Bar Tester
For Lidar application, such as laser chips, industrial-grade high-power laser chips, medical and display and other high-power laser chip fields.
It supports high current, ns-level short pulse condition testing, and fully automatic testing of BAR bar LIV curves, spectrum and far-field parameters. Also support variable temperature testing.
Fully automatic load/unload; It supports loading of various specifications of material boxes and unloading of various specifications of material boxes or blue tape.
- The loading(input) supports automatically identifies the position and length of the bar. Picking up the middle of the bar, and automatically calibrates the angle deviation of the bar.
- The bar is picked up through vacuum suction of the nozzle, which also supports quick replacement of nozzles with different inner diameters. The pushing knife pushes the bar to the testing stage under testing position. The nozzle design with force detection system which is adjustable.
- The bar testing stage adopts a patented heat pipe which with rapid thermal conduction structure; It is also equipped with an auxiliary pressing design at both sides to assist in reliable contact pressing of the bar.
- The front integrated sphere measures the LIV curve. The collimator measures the spectrum, and the testing stage have the function of dirt auto-cleaning.
Features
- It supports different of chip boxes/carriers and automatically load/unload.
- Integrate self-developed high-current, short-pulse test instruments to support Bar LIV, spectrum, and far-field testing.
- It supports Kelvin measurement (Voltage), and low inductance design of current power circuit
- It supports probe force detection.
- The machine integrates room temperature and high temperature testing stages, and supports TEC temperature control.
- Support OCR function, bad die/chip marked by Ink or Probe mark.
Technical specification
| Item | Specification |
|---|---|
| Suitable for Bar Size | Length: 15~30mm, Width: 1~4m; Other bar widths can be customized for the testing stage. |
| Probe Pressure | Default 10±1g, User adjustable |
| Nozzle Specification | Standard with double-head bakelite nozzle, inner diameter 200um |
| Nozzle Pressure | Default 20±2g, User adjustable |
| Pushing Force of Pushing Knife | Default 80±2g, User adjustable |
| Pulse Current Output | Range 0~50A, Accuracy 0.5%rdg±200mA |
| Pulse Characteristics | Mini. pulse width: 100ns, Max. duty cycle: 0.1% ; The duty cycle can be set under different pulse widths and different currents. |
| Pulse Voltage Measurement | Range 0~40V, Accuracy 0.5%rdg±200mV Kelvin measurement design, Peak detection |
| Pulse Current Measurement | Range 0~50A, Accuracy 0.5%rdg±200mA, Peak detection |
| Optical Power Measurement | Equivalent photocurrent detection range and accuracy： Range 0~10mA, Accuracy 0.5%rdg±50uA, Peak detection The basic configuration supports 100W input optical power, Different attenuators can be configured for different power ranges, Customizable |
| Far Field Divergence Angle Testing | Range ±60°, Resolution ±0.072° |
| Test Efficiency (Typical Value) | Testing time of a single chip in a process： ≤9s Testing items：LIV + Spectrum (1 point) + ID identification |
| Wavelength Testing | 800~1700nm, Power +20~ -90dbm；Accuracy 0.1% FS±50uW； Resolution 0.1nm；Corresponding accuracy 0.3nm； Wavelength range 600~1700nm；Corresponding speed 0.2s/100nm Arnitsu spectrometer MS9740B (narrow pulse non-trigger mode) |
| Output Characteristic Curve | (1) I-L characteristics (2) I-V characteristics (3) Spectral parameters (4) Far-field divergence angle curve (depending on configuration) |
| Test Parameter | Ith, P, Im, Vf, Rs, SE, Kink, λp, λc, SMSR...etc |
| Spectrum Testing | (1) λp peak wavelength (2) PEAK (3) SMSR (4) -20dBwide Arnitsu spectrometer MS9740B (narrow pulse non-trigger mode) |
| Correction Function | Users can calibrate themselves |
| Temperature Control Range of Room Temperature Stage | 15℃~50℃, Accuracy ±1℃ |
| Temperature Control Range of High Temperature Stage | Room temperature +10°～85°C, Accuracy <±1°C |
EOS Test
Waveform Verification Result
PIV Curve
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